Infineon broadens its EiceDRIVER™ portfolio with the new fast level-shift family of 0.7 A, 650 V, half-bridge and HS+LS SOI gate drivers in DSO-8 package and 2.5 A HS+LS driver in DSO-16W package.
Fast 90 ns propagation delay and tight 10 ns (max) matching enables higher frequency switching to expand applications to LLC / LCC resonant ZVS topologies used in many different power conversion applications such as SMPS, UPS, eV wall chargers, battery chargers and LED lighting luminaires, to name a few.
Integrated ultra-fast bootstrap diode, excellent negative VS transient immunity and independent per channel under voltage lockouts suitable for MOSFETs and IGBTs enable superior performance and reduced bill of material (BOM) costs.
The Infineon unique, measurable advantages include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that cause latch-up. This technology can also lower the level-shift power losses to minimise device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.